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HZD6.2Z4
Silicon Planar Zener Diode for Surge Absorb
REJ03G0200-0200 Rev.2.00 Oct 20, 2004
Features
* Low capacitance (C = 4.0 pF max) and can protect ESD of signal line. * Super small Flat Package (SFP) is suitable for surface mount design.
Ordering Information
Type No. HZD6.2Z4 N1 Laser Mark SFP Package Code
Pin Arrangement
Cathode mark Mark 1
N1
2 1. Cathode 2. Anode
Rev.2.00, Oct 20, 2004, page 1 of 4
HZD6.2Z4
Absolute Maximum Ratings
(Ta = 25C)
Item Power dissipation Junction temperature Storage temperature Note: See Fig.2. Symbol Pd * Tj Tstg Value 150 150 -55 to +150 Unit mW C C
Electrical Characteristics
(Ta = 25C)
Item Zener voltage Reverse current Capacitance Dynamic resistance 12 ESD-Capability * * Symbol VZ IR C rd -- Min 5.9 -- -- -- 8 Typ -- -- -- -- -- Max 6.5 3 4 60 -- Unit V A pF kV Test Condition IZ = 5 mA, 40 ms pulse VR = 5.5 V VR = 0 V, f = 1 MHz IZ = 5 mA C = 150 pF, R = 330 , Both forward and reverse direction 10 pulse
Notes: 1. Failure criterion ; IR > 3 A at VR = 5.5 V. 2. Between cathode and anode. 3. Please do not use the soldering iron due to avoid high stress to the SFP package.
Rev.2.00, Oct 20, 2004, page 2 of 4
HZD6.2Z4
Main Characteristic
10-2 250
Polyimide board 20hx15wx0.8t
10-3 Zener Current IZ (A)
Power Dissipation Pd (mW)
200
3.0
1.5
150
1.5
unit: mm
10-4
100
10-5
50
10-6
0
2
4
6
8
10
0
0
50
100
150
Zener Voltage VZ (V) Fig.1 Zener current vs. Zener voltage
Ambient Temperature Ta (C) Fig.2 Power Dissipation vs. Ambient Temperature
Nonrepetitive Surge Reverses Power PRSM (W)
104 PRSM t 10
3
Ta = 25C nonrepetitive
102
10
1.0
10-2
10-1
1.0 Time t (s)
10
102
103
Fig.3 Surge Reverse Power Ratings
Rev.2.00, Oct 20, 2004, page 3 of 4
0.8
200
HZD6.2Z4
Package Dimensions
As of January, 2003
Unit: mm
1.0 0.10 1.4 0.10
0.13 0.05
0.5 - 0.55
0.3 0.05 0.6 0.05
Package Code JEDEC JEITA Mass (reference value)
SFP -- -- 0.0010 g
Rev.2.00, Oct 20, 2004, page 4 of 4
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Keep safety first in your circuit designs!
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(c) 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
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